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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Study of in-plane electrical transport anisotropy of a-axis oriented YBa_2Cu_3O_(7-δ) nanodevices
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Study of in-plane electrical transport anisotropy of a-axis oriented YBa_2Cu_3O_(7-δ) nanodevices

机译:a轴取向的YBa_2Cu_3O_(7-δ)纳米器件的面内电输运各向异性研究

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摘要

In the present work, we report the growth of fully untwinned high-quality a-axis-oriented YBa_2Cu_3O_(7-δ) films on (100) SrLaGaO_4 substrates by using PrBa_2Cu_3O_(7-δ) as a buffer layer. We also fabricated nanowires at different angles y with respect to the [0,1,0] direction of the substrate and studied the in-plane anisotropy of the critical current density, which we explained by considering the anisotropy in the coherence length ζ and London penetration depth λ_L. Finally, half-integer Shapiro-like steps measured in slightly underdoped c-axis oriented (y = 90°) nanowires point towards a different transport regime, which could shed light on intriguing issues of high-critical-temperature superconductors.
机译:在当前的工作中,我们报告了通过使用PrBa_2Cu_3O_(7-δ)作为缓冲层,在(100)SrLaGaO_4衬底上完全不缠绕的高质量a轴取向YBa_2Cu_3O_(7-δ)薄膜的生长。我们还制备了相对于基板[0,1,0]方向具有不同角度y的纳米线,并研究了临界电流密度的面内各向异性,我们通过考虑相干长度ζ和伦敦的各向异性来进行解释穿透深度λ_L。最后,在稍微掺杂的c轴取向(y = 90°)的纳米线中测量的半整数类似Shapiro的台阶指向不同的传输方式,这可能会揭示出高临界温度超导体这一令人感兴趣的问题。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics 》 |2017年第18期| 184505.1-184505.7| 共7页
  • 作者单位

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology,SE-41296 Goeteborg, Sweden;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology,SE-41296 Goeteborg, Sweden;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology,SE-41296 Goeteborg, Sweden;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology,SE-41296 Goeteborg, Sweden;

    Low Temperature Laboratory (OVLL), Aalto University School of Science, P.O. Box 13500, FI-00076 Aalto, Finland;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology,SE-41296 Goeteborg, Sweden;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology,SE-41296 Goeteborg, Sweden;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology,SE-41296 Goeteborg, Sweden;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology,SE-41296 Goeteborg, Sweden;

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