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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Increased low-temperature damping in yttrium iron garnet thin films
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Increased low-temperature damping in yttrium iron garnet thin films

机译:钇铁石榴石薄膜的低温阻尼增加

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We report measurements of the frequency and temperature dependence of ferromagnetic resonance (FMR) for a 15-nm-thick yttrium iron garnet (YIG) film grown by off-axis sputtering. Although the FMR linewidth is narrow at room temperature [corresponding to a damping coefficient a = (9.0 ± 0.2) × 10~(-4)], comparable to previous results for high-quality YIG films of similar thickness, the linewidth increases strongly at low temperatures, by a factor of almost 30. This increase cannot be explained as due to two-magnon scattering from defects at the sample interfaces. We point out that the increased low-temperature linewidth can be explained by impurity relaxation mechanisms that were elucidated 50 years ago in bulk YIG samples. High-purity starting materials and careful optimization of growth protocols to avoid nonstoichiometries should therefore be employed for making low-temperature thin-film YIG devices.
机译:我们报告的离轴溅射生长的15纳米厚的钇铁石榴石(YIG)膜的铁磁共振(FMR)的频率和温度依赖性的测量。尽管FMR线宽在室温下很窄[对应于阻尼系数a =(9.0±0.2)×10〜(-4)],与先前对类似厚度的高质量YIG薄膜的结果相媲美,但线宽在低温,几乎是30倍。之所以无法解释这种增加,是因为样品界面处的缺陷造成了两磁子散射。我们指出,增加的低温线宽可以用50年前在散装YIG样品中阐明的杂质弛豫机制来解释。因此,应采用高纯度的起始原料和对生长方案的精心优化以避免非化学计量,以制造低温薄膜YIG器件。

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