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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Nonlinear magneto-optic effects in doped graphene and in gapped graphene: A perturbative treatment
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Nonlinear magneto-optic effects in doped graphene and in gapped graphene: A perturbative treatment

机译:掺杂石墨烯和带隙石墨烯中的非线性磁光效应:微扰处理

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摘要

The nonlinear magneto-optic responses are investigated for gapped graphene and doped graphene in a perpendicular magnetic field. The electronic states are described by Landau levels, and the electron dynamics in an optical field is obtained by solving the density matrix in die equation of motion. In the linear dispersion approximation around the Dirac points, both linear conductivity and third-order nonlinear conductivities are numerically evaluated for infrared frequencies. The nonlinear phenomena, including third harmonic generation, Kerr effects, and two-photon absorption, and four-wave mixing, are studied. All optical conductivities show strong dependence on the magnetic field. At weak magnetic fields, our results for doped graphene agree with those in the literature. We also present the spectra of the conductivities of gapped graphene. At strong magnetic fields, the third-order conductivities show peaks with varying the magnetic field and the photon energy. These peaks are induced by the resonant transitions between different Landau levels. The resonant channels, the positions, and the divergences of peaks are analyzed. The conductivities can be greatly modified, up to orders of magnitude. The dependence of the conductivities on the gap parameter and the chemical potential is studied.
机译:研究了垂直磁场中带隙石墨烯和掺杂石墨烯的非线性磁光响应。用兰道能级描述电子状态,通过求解运动方程中的密度矩阵来获得光场中的电子动力学。在狄拉克点附近的线性弥散近似中,对红外频率进行了线性电导率和三阶非线性电导率的数值评估。研究了非线性现象,包括三次谐波的产生,克尔效应,双光子吸收以及四波混频。所有的光导率都显示出对磁场的强烈依赖性。在弱磁场下,我们掺杂石墨烯的结果与文献中的结果一致。我们还介绍了带隙石墨烯电导率的光谱。在强磁场下,三阶电导率会随磁场和光子能量的变化而出现峰值。这些峰是由不同的Landau能级之间的共振跃迁引起的。分析了共振通道,峰的位置和发散度。电导率可以被最大程度地修改。研究了电导率对间隙参数和化学势的依赖性。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2018年第12期|125417.1-125417.17|共17页
  • 作者

    J. L. Cheng; C. Guo;

  • 作者单位

    The Guo China-US Photonics Laboratory, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Eastern South Lake Road, Changchun, Jilin 130033, China,School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;

    The Guo China-US Photonics Laboratory, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Eastern South Lake Road, Changchun, Jilin 130033, China,The Institute of Optics, University of Rochester, Rochester, New York 14627, USA;

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