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First-principles study of electronic structure modulations in graphene on Ru(0001) by Au intercalation

机译:Au插层在Ru(0001)上石墨烯中电子结构调制的第一性原理研究

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摘要

First-principles calculations based on density functional theory are used to explore the electronic-structure modulations in graphene on Ru(0001) by Au intercalation. We first use a lattice-matched model to demonstrate that a substantial band gap is induced in graphene by sufficiendy strong A-B sublattice symmetry breaking. This band gap opening occurs even in the absence of hybridization between graphene it states and Au states, and a strong sublattice asymmetry is established for a small separation (d) between the graphene and Au layer, typically, d < 3.0 A, which can actually be achieved for a low Au coverage. In realistic situations, which are mimicked using lattice-mismatched models, graphene it states near the Dirac point easily hybridize with nearby (in energy) Au states even for a van der Waals distance, d ~ 3.4 A, and this hybridization usually dictates a band gap opening in graphene. In that case, the top parts of the intact Dirac cones survive die hybridization and are isolated to form midgap states within the hybridization gap, denying that the band gap is induced by sublattice symmetry breaking. This feature of a band gap opening is similar to that found for the so-called "first" graphene layer on silicon carbide (SiC) and die predicted band gap and doping level are in good agreement with the experiments for graphene/Au/Ru(0001).
机译:利用基于密度泛函理论的第一性原理计算,探索了Au插层在Ru(0001)上石墨烯的电子结构调制。我们首先使用晶格匹配模型来证明通过足够强的A-B亚晶格对称性破坏在石墨烯中诱导了明显的带隙。即使在其状态的石墨烯和Au状态之间不存在杂化的情况下,也会出现该带隙开口,并且对于石墨烯和Au层之间的小间距(d),通常是d <3.0 A,建立了很强的亚晶格不对称性。可以实现低Au覆盖率。在现实情况下(使用晶格不匹配模型进行模拟),即使在范德华距离d〜3.4 A时,处于Dirac点附近的石墨烯也很容易与附近(处于能量状态)的Au态杂交,这种杂交通常决定了一个能带石墨烯中的缝隙开口。在那种情况下,完整的狄拉克锥的顶部在杂交后仍能幸存,并且在杂交间隙内被隔离而形成中间能隙状态,否认带隙是由亚晶格对称性破坏引起的。带隙开口的特征与在碳化硅(SiC)上的所谓“第一”石墨烯层发现的特征相似,并且据预测带隙和掺杂水平与石墨烯/ Au / Ru( 0001)。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2018年第11期|115437.1-115437.12|共12页
  • 作者单位

    Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University, Morioka 020-8551, Japan;

    Department of Engineering for Future Innovation, National Institute of Technology, Ichinoseki College, Ichinoseki 021-8511, Japan;

    Department of Physical Science and Materials Engineering, Faculty of Science and Engineering, Iwate University, Morioka 020-8551, Japan;

    Professor Emeritus, Iwate University, Morioka 020-8550, Japan;

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