...
首页> 外文期刊>Physical review letters >3D Quantum Hall Effect of Fermi Arcs in Topological Semimetals
【24h】

3D Quantum Hall Effect of Fermi Arcs in Topological Semimetals

机译:FERMI弧线在拓扑半球中的3D量子霍尔疗效

获取原文
获取原文并翻译 | 示例
           

摘要

The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by theWeyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d - 2)-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through theWeyl nodes, the sheet Hall conductivity evolves from the 1/B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3As2, or Na3Bi. This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.
机译:通常在2D系统中观察量子霍尔疗效。我们表明Fermi弧可以引发拓扑半球的独特3D量子霍尔效应。由于拓扑约束,在单个表面的Fermi弧具有开放的费米表面,不能托管量子霍尔效应。通过“虫洞”隧道辅助Theweyl节点,在相对表面的Fermi弧可以形成完整的费米环并支持量子霍尔效应。 FERMI弧的边缘状态显示出独特的3D分布,赋予(D-2) - 二维边界状态的示例。这与来自拓扑绝缘体的单个表面的表面状态量子霍尔效应明显不同。随着FERMI能量扫过的,通过TRENEL节点扫描,纸张霍尔电导率从威尔节点处的量化平坦的1 / B依赖性发展。这种行为可以通过调谐拓扑半型板块中的栅极电压来实现,例如TAAS系列,CD3AS2或NA3BI。这项工作对于搜索Fermi弧的运输签名,而且对于在其他拓扑阶段进行探索的新型电子气体,这将是有益的。

著录项

  • 来源
    《Physical review letters》 |2017年第17期|136806.1-136806.7|共7页
  • 作者单位

    South Univ Sci & Technol China Inst Quantum Sci & Engn Shenzhen 518055 Peoples R China|South Univ Sci & Technol China Dept Phys Shenzhen 518055 Peoples R China|Anyang Normal Univ Sch Phys & Elect Engn Anyang 455000 Peoples R China|Shenzhen Key Lab Quantum Sci & Engn Shenzhen 518055 Peoples R China;

    South Univ Sci & Technol China Inst Quantum Sci & Engn Shenzhen 518055 Peoples R China|South Univ Sci & Technol China Dept Phys Shenzhen 518055 Peoples R China|Shenzhen Key Lab Quantum Sci & Engn Shenzhen 518055 Peoples R China;

    South Univ Sci & Technol China Inst Quantum Sci & Engn Shenzhen 518055 Peoples R China|South Univ Sci & Technol China Dept Phys Shenzhen 518055 Peoples R China|Shenzhen Key Lab Quantum Sci & Engn Shenzhen 518055 Peoples R China;

    Peking Univ Sch Phys Int Ctr Quantum Mat Beijing 100871 Peoples R China|Collaborat Innovat Ctr Quantum Matter Beijing 100871 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号