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3D Quantum Hall Effect of Fermi Arc in Topological Semimetals

机译:拓扑半金属中费米弧的3D量子霍尔效应

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The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by theWeyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d - 2)-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through theWeyl nodes, the sheet Hall conductivity evolves from the 1/B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3As2, or Na3Bi. This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.
机译:通常在2D系统中观察到量子霍尔效应。我们表明,费米弧能在拓扑半金属中产生独特的3D量子霍尔效应。由于拓扑约束,单个表面上的费米弧具有开放的费米表面,无法容纳量子霍尔效应。通过由Weyl节点辅助的“虫洞”隧道,相对表面的费米弧可形成完整的费米环并支持量子霍尔效应。费米弧的边缘状态显示出唯一的3D分布,给出了(d-2)维边界状态的示例。这与拓扑绝缘体的单个表面的表面状态量子霍尔效应明显不同。当费米能量扫过Weyl节点时,薄板霍尔电导率从1 / B依赖性演变为Weyl节点处的量化平稳。这种行为可以通过调整拓扑半金属(如TaAs族,Cd3As2或Na3Bi)中的栅极电压来实现。这项工作不仅对寻找费米弧的传输特征具有指导意义,而且对于探索物质的其他拓扑相中的新型电子气体也将具有指导意义。

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  • 来源
    《Physical review letters》 |2017年第13期|136806.1-136806.7|共7页
  • 作者单位

    South Univ Sci & Technol China, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China|South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China|Anyang Normal Univ, Sch Phys & Elect Engn, Anyang 455000, Peoples R China|Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China;

    South Univ Sci & Technol China, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China|South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China|Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China;

    South Univ Sci & Technol China, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China|South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China|Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China;

    Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China|Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China;

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