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首页> 外文期刊>Physical review letters >Reducing Phonon-Induced Decoherence in Solid-State Single-Photon Sources with Cavity Quantum Electrodynamics
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Reducing Phonon-Induced Decoherence in Solid-State Single-Photon Sources with Cavity Quantum Electrodynamics

机译:用腔量子电动力学减少固态单光子源中的声子诱导的粘膜

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摘要

Solid-state emitters are excellent candidates for developing integrated sources of single photons. Yet, phonons degrade the photon indistinguishability both through pure dephasing of the zero-phonon line and through phonon-assisted emission. Here, we study theoretically and experimentally the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity as a function of temperature. We show that a large coupling to a high quality factor cavity can simultaneously reduce the effect of both phonon-induced sources of decoherence. It first limits the effect of pure dephasing on the zero-phonon line with indistinguishabilities above 97% up to 18 K. Moreover, it efficiently redirects the phonon sidebands into the zero-phonon line and brings the indistinguishability of the full emission spectrum from 87% (24%) without cavity effect to more than 99% (76%) at 0K (20K). We provide guidelines for optimal cavity designs that further minimize the phonon-induced decoherence.
机译:固态发射器是用于开发单个光子的集成来源的优异候选者。然而,声子通过纯旋光线和通过声子辅助发射来降低光子欺诈性。在这里,我们从理论上和实验地研究由微腔作为温度的微腔中的半导体量子点发射的光子的不可粘合性。我们表明,高质量因子腔的大耦合可以同时降低声子诱导的脱干源的效果。它首先限制纯粹相当于零位线的效果,禁止注入量高于97%高达18 k。此外,它有效地将声子边带重定向到零位线中,并带来了从87%的完整发射光谱的无法区分(24%)没有腔效应超过99%(76%),0k(20k)。我们提供了最佳腔设计的指导方针,进一步最小化了声子诱导的脱机。

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  • 来源
    《Physical review letters 》 |2017年第26期| 253602.1-253602.6| 共6页
  • 作者单位

    Univ Grenoble Alpes F-38000 Grenoble France|CNRS Inst Neel Nanophys & Semicond Grp F-38000 Grenoble France;

    Univ Paris Sud CNRS C2N Marcoussis Ctr Nanosci & Nanotechnol UMR 9001 F-91460 Paris France;

    Univ Paris Sud CNRS C2N Marcoussis Ctr Nanosci & Nanotechnol UMR 9001 F-91460 Paris France;

    Univ Paris Sud CNRS C2N Marcoussis Ctr Nanosci & Nanotechnol UMR 9001 F-91460 Paris France|Univ Paris 11 Univ Paris Saclay F-91405 Orsay France;

    Univ Paris Sud CNRS C2N Marcoussis Ctr Nanosci & Nanotechnol UMR 9001 F-91460 Paris France;

    Univ Paris Sud CNRS C2N Marcoussis Ctr Nanosci & Nanotechnol UMR 9001 F-91460 Paris France;

    Univ Paris Sud CNRS C2N Marcoussis Ctr Nanosci & Nanotechnol UMR 9001 F-91460 Paris France;

    Univ Paris Sud CNRS C2N Marcoussis Ctr Nanosci & Nanotechnol UMR 9001 F-91460 Paris France;

    Univ Grenoble Alpes F-38000 Grenoble France|CNRS Inst Neel Nanophys & Semicond Grp F-38000 Grenoble France;

    Univ Paris Sud CNRS C2N Marcoussis Ctr Nanosci & Nanotechnol UMR 9001 F-91460 Paris France;

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