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Two Phase Transitions in the Two-Dimensional Nematic Three-Vector Model with No Quasi-Long-Range Order: Monte Carlo Simulation of the Density of States

机译:二维向列三向量模型中没有拟长距离阶的两个相变:态密度的蒙特卡罗模拟

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摘要

The presence of stable topological defects in a two-dimensional (d = 2) liquid crystal model allowing molecular reorientations in three dimensions (n = 3) was largely believed to induce a defect-mediated Berzenskii-Kosterlitz-Thouless-type transition to a low temperature phase with quasi-long-range order. However, earlier Monte Carlo (MC) simulations could not establish certain essential signatures of the transition, suggesting further investigations. We study this model by computing its equilibrium properties through MC simulations, based on the determination of the density of states of the system. Our results show that, on cooling, the high temperature disordered phase deviates from its initial progression towards the topological transition, crossing over to a new fixed point, condensing into a nematic phase with exponential correlations of its director fluctuations. The thermally induced topological kinetic processes continue, however, limited to the length scales set by the nematic director fluctuations, and lead to a second topological transition at a lower temperature. It is argued that in the (d = 2, n = 3) system with an attractive biquadratic Hamiltonian, the presence of additional molecular degrees of freedom and local Z(2) symmetry associated with lattice sites together promote the onset of an additional relevant scaling field at matching length scales in the high temperature region, leading to a crossover.
机译:二维(d = 2)液晶模型中存在稳定的拓扑缺陷,可以在三个维度(n = 3)进行分子重新定向,人们普遍认为该缺陷会导致缺陷介导的Berzenskii-Kosterlitz-Thouless型过渡到低价温度相具有准远程范围。但是,早期的蒙特卡洛(MC)模拟无法建立过渡的某些基本特征,建议进行进一步研究。我们通过确定系统状态密度,通过MC模拟计算其平衡特性来研究该模型。我们的结果表明,在冷却时,高温无序相偏离了其最初向拓扑转变的初始过程,越过了一个新的固定点,凝结成向列相,其指向矢波动呈指数相关。然而,热诱导的拓扑动力学过程继续进行,限于由向列导向剂波动设定的长度尺度,并导致在较低温度下的第二拓扑转变。有人认为,在具有吸引人的二次二次哈密顿量的(d = 2,n = 3)系统中,与晶格位点相关的附加分子自由度和局部Z(2)对称性的存在共同促进了附加相关尺度的发生在高温区域中以匹配的长度尺度测量磁场,从而导致交叉。

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  • 来源
    《Physical review letters》 |2018年第21期|217801.1-217801.5|共5页
  • 作者单位

    Univ Hyderabad, Sch Phys, Hyderabad 500046, Telangana, India;

    Univ Hyderabad, Ctr Modelling Simulat & Design, Hyderabad 500046, Telangana, India;

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