Remanence due to Wall Magnetization and Counterintuitive Magnetometry Data in 200-nm Films of Ni

摘要

200-nm-thick Ni films in an epitaxial Cu/Ni/Cu/Si(001) structure are expected to have an in-plane effective magnetic anisotropy. However, the in-plane remanence is only 42%, and magnetic force microscopy domain images suggest perpendicular magnetization. Quantitative magnetic force microscopy analysis can resolve the inconsistencies and show that (ⅰ) the films have perpendicular domains capped by closure domains with magnetization canted at 51° from the film normal, (ⅱ) the magnetization in the Bloch domain walls between the perpendicular domains accounts for the low in-plane remanence, and (ⅲ) the perpendicular magnetization process requires a short-range domain wall motion prior to wall-magnetization rotation and is nonhysteretic, whereas the in-plane magnetization requires long-range motion before domain-magnetization rotation and is hysteretic.