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Thermal Conductivity and Specific Heat of Thin-Film Amorphous Silicon

机译:薄膜非晶硅的导热系数和比热

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摘要

We report the thermal conductivity and specific heat of amorphous silicon thin films measured from 5-300 K using silicon-nitride membrane-based microcalorimeters. Above 50 K the thermal conductivity of thin-film amorphous silicon agrees with values previously reported by other authors. However, our data show no plateau, with a low T suppression of the thermal conductivity that suggests that the scattering of long wavelength, low Q vibrations goes as Q~2. The specific heat shows Debye-like behavior below 15 K, with θ_D = 487 ± 5 K, and is consistent with a very small contribution of tunneling states in amorphous silicon. Above 15 K, the specific heat deviates less from Debye behavior than does its crystalline allotrope, indicating no significant excess modes (boson peak) in amorphous silicon.
机译:我们报告使用基于氮化硅膜的量热仪从5-300 K测量的非晶硅薄膜的热导率和比热。高于50 K时,薄膜非晶硅的热导率与其他作者先前报道的值一致。然而,我们的数据显示没有平台,对热导率的低T抑制表明长波长的散射,低Q振动随Q〜2而变化。比热在15 K以下时表现出类似Debye的行为,θ_D= 487±5 K,并且与非晶硅中隧穿态的贡献很小。高于15 K时,比热与其晶体同素异形体的偏差比Debye行为小,表明非晶硅中没有明显的过量模式(玻色子峰)。

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