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首页> 外文期刊>Physical review letters >Evidence of Cobalt-Vacancy Complexes in Zn_(1-x)Co_xO Dilute Magnetic Semiconductors
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Evidence of Cobalt-Vacancy Complexes in Zn_(1-x)Co_xO Dilute Magnetic Semiconductors

机译:Zn_(1-x)Co_xO稀磁半导体中钴空位络合物的证据

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摘要

We investigate the local structure of ferromagnetic Zn_(1-x)Co_xO epilayers by coupling polarization-dependent x-ray absorption spectroscopy and ab initio calculations of selected defect structures. We give clear evidence of the presence of oxygen vacancies, located close to the Co atoms in a specific complex configuration. We also establish the upper concentration limit of metallic parasitic nanophases and their contribution to magnetism. Our results lead to the conclusion that oxygen vacancies play an important role in originating the high temperature ferromagnetism of Zn_(1-x)Co_xO.
机译:我们通过耦合依赖于偏振的X射线吸收光谱和从头开始计算所选缺陷结构来研究铁磁Zn_(1-x)Co_xO外延层的局部结构。我们提供了明确的证据,表明氧空位的存在以特定的复杂构型位于靠近Co原子的位置。我们还确定了金属寄生纳米相的浓度上限及其对磁性的贡献。我们的结果得出结论:氧空位在引发Zn_(1-x)Co_xO的高温铁磁性中起着重要作用。

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