首页> 外文学位 >Light scattering study of the diluted magnetic semiconductors zinc(1-x) cobalt(x) selenide and zinc(1-x) iron(x) selenide.
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Light scattering study of the diluted magnetic semiconductors zinc(1-x) cobalt(x) selenide and zinc(1-x) iron(x) selenide.

机译:稀释的磁性半导体锌(1-x)钴(x)硒化物和锌(1-x)硒铁(x)的光散射研究。

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Crystal field and Band theories provide good descriptions of electrons in the localized and itinerent limits. The 4f and outer s,p electrons are examples of carriers in a solid classified under these respective schemes. In doped semiconductors such as Si:P, the excess electrons approximate as s-like discrete hydrogenic levels that broaden into a band beyond a critical concentration leading to insulator-metal transitions. On the other hand, d-electrons, as realized in diluted magnetic semiconductors (DMS) have intraatomic interactions of intermediate strength and generally fall between these oppositing limits. The interactions between 3d levels can be varied through choice of magnetic dopants as Mn, Fe and Co that are characterized by very different s,p-d and d-d interactions. Further, since the d-level impurity does not provide an excess carrier to the II-VI host lattice, these DMS compounds generally remain insulating. In this thesis, I will discuss the effects of the enhanced exchange interactions, the disorder and the influence of external pressure on the emission spectra and lattice vibrations in both {dollar}rm Znsb{lcub}1-x{rcub}Cosb{lcub}x{rcub}Se{dollar} and {dollar}rm Znsb{lcub}1-x{rcub}Fesb{lcub}x{rcub}Se.{dollar}
机译:晶体场和能带理论很好地描述了局域和迭代极限中的电子。 4f电子和外部s,p电子是根据这些相应方案分类的固体中载流子的示例。在诸如Si:P的掺杂半导体中,多余的电子近似为s形的离散氢能级,其扩展到一个超过临界浓度的能带,从而导致绝缘体-金属跃迁。另一方面,在稀磁半导体(DMS)中实现的d电子具有中等强度的原子内相互作用,并且通常落在这些相对的极限之间。 3d能级之间的相互作用可以通过选择锰,铁和钴等磁性掺杂剂来改变,其特征是s,p-d和d-d相互作用非常不同。此外,由于d级杂质不会为II-VI主晶格提供过量的载流子,因此这些DMS化合物通常保持绝缘。在这篇论文中,我将讨论增强的交换相互作用,无序性以及外部压力对{rm} rm Znsb {lcub} 1-x {rcub} Cosb {lcub}的发射光谱和晶格振动的影响。 x {rcub} Se {dollar}和{dollar} rm Znsb {lcub} 1-x {rcub} Fesb {lcub} x {rcub} Se。{dollar}

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