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Gatemon Benchmarking and Two-Qubit Operations

机译:Gatemon基准测试和二位运算

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Recent experiments have demonstrated superconducting transmon qubits with semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize field effect tunability characteristic of semiconductors to allow complete qubit control using gate voltages, potentially a technological advantage over conventional flux-controlled transmons. Here, we present experiments with a two-qubit gatemon circuit. We characterize qubit coherence and stability and use randomized benchmarking to demonstrate single-qubit gate errors below 0.7% for all gates, including voltage-controlled Z rotations. We show coherent capacitive coupling between two gatemons and coherent swap operations. Finally, we perform a two-qubit controlled-phase gate with an estimated fidelity of 91%, demonstrating the potential of gatemon qubits for building scalable quantum processors.
机译:最近的实验证明了具有半导体纳米线约瑟夫森结的超导跨子量子位。这些混合门极量子位利用了半导体的场效应可调谐性特性,以允许使用栅极电压进行完整的量子位控制,这可能是优于常规磁通量控制的变形子的技术优势。在这里,我们介绍了一个具有两个量子比特的门控电路的实验。我们表征了量子比特的相干性和稳定性,并使用随机基准测试来证明所有栅极的单量子比特栅极误差均低于0.7%,包括电压控制的Z旋转。我们展示了两个门控之间的相干电容耦合和相干交换操作。最后,我们以估计的保真度为91%执行了一个两比特控制相闸门,证明了闸门量子比特在构建可扩展量子处理器方面的潜力。

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  • 来源
    《Physical review letters》 |2016年第15期|150505.1-150505.5|共5页
  • 作者单位

    Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, Stn Copenhagen Q, Blegdamsvej 17, DK-2100 Copenhagen, Denmark;

    Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, Stn Copenhagen Q, Blegdamsvej 17, DK-2100 Copenhagen, Denmark;

    Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, Stn Copenhagen Q, Blegdamsvej 17, DK-2100 Copenhagen, Denmark;

    Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, Stn Copenhagen Q, Blegdamsvej 17, DK-2100 Copenhagen, Denmark;

    Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, Stn Copenhagen Q, Blegdamsvej 17, DK-2100 Copenhagen, Denmark;

    Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, Stn Copenhagen Q, Blegdamsvej 17, DK-2100 Copenhagen, Denmark|Univ Copenhagen, Niels Bohr Inst, Nanosci Ctr, Blegdamsvej 17, DK-2100 Copenhagen, Denmark;

    Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, Stn Copenhagen Q, Blegdamsvej 17, DK-2100 Copenhagen, Denmark;

    Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, Stn Copenhagen Q, Blegdamsvej 17, DK-2100 Copenhagen, Denmark;

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