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Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device

机译:在SI / SIGE双QUBBit设备中基准栅极保真度

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We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system, here giving a 92% fidelity estimate for the controlled- Z gate. Interestingly, with character randomized benchmarking, the two-qubit gate fidelity can be obtained by studying the additional decay induced by interleaving the two-qubit gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.
机译:我们在基于硅的旋转QUBITS中报告了单个Qubit和双Qubit门保护的第一个完整表征,包括两个Qubits之间的串扰和误差相关性。为此,我们使用标准随机基准测试的组合和最近引入的方法称为角色随机基准测试,这允许在该系统中进行更可靠的估计该系统的双量标保真度,这里给出了控制z的92%保险费估计门。有趣的是,利用字符随机基准测试,可以通过在仅通过在单个Qubit门的参考序列中交织双量标门来实现额外的衰减来获得双量标门保护。这项工作设置了硅旋转Qubits中的所有相关栅极保真度进一步改进的阶段,超出了容错量子计算的误差阈值。

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