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机译:石墨烯N〜+ -I-N-N〜+结构中注入弹道载体的库仑阻力:掺杂和温度效应
Research Institute of Electrical Communication Tohoku University Sendai 980-8577 Japan Institute of Ultra High Frequency Semiconductor Electronics of RAS Moscow 117105 Russia;
Research Institute of Electrical Communication Tohoku University Sendai 980-8577 Japan;
Department of Computer Science and Engineering University of Aizu Aizu-Wakamatsu 965-8580 Japan;
Department of Electrical Engineering University at Buffalo SUNY Buffalo New York 14260 USA;
Department of Electrical Computer and Systems Engineering Rensselaer Polytechnic Institute Troy New York 12180 USA;
ballistic electrons; carrier drags; field-effect transistors; graphene diodes;
机译:具有弹道注射的N〜+ -I-N-N +石墨烯FET中的Terahertz等离子体不稳定性的库仑电子阻力机制
机译:石墨烯-GaAs异质结构中的异常低温库仑阻力
机译:石墨烯-GaAs异质结构中的异常低温库仑阻力
机译:从混合石墨烯/ GaAs器件中的电荷检测到库仑阻力
机译:未掺杂电子-空穴双层的低温迁移和库仑阻力研究。
机译:掺杂温度和氮前驱物对氮掺杂还原氧化石墨烯的物理化学光学和电导性质的影响
机译:库仑阻力作为掺杂石墨烯中三角形翘曲的量度