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METHOD FOR DOPING GRAPHENE, METHOD FOR MANUFACTURING GRAPHENE COMPOSITE ELECTRODE, AND GRAPHENE STRUCTURE COMPRISING SAME

机译:掺杂石墨烯的方法,制造石墨烯复合电极的方法以及包含该石墨烯的石墨烯结构

摘要

The present invention relates to graphene and, particularly, to a method for doping graphene using substrate surface modification, a method for manufacturing a graphene composite electrode using graphene and inorganic matter, and a graphene structure comprising the same. The method for doping graphene according to an embodiment of the present invention may comprise the steps of: forming, on a substrate, a precursor polymer layer for doping; and positioning graphene on the substrate on which the precursor polymer layer is formed. In addition, the method for manufacturing a graphene composite electrode according to an embodiment of the present invention may comprise the steps of: forming graphene on catalyst metal; forming a transparent conductive oxide on the graphene; crystallizing the transparent conductive oxide by applying heat of 150° C. or higher; and transferring, to a final substrate, a composite electrode consisting of the graphene and the transparent conductive oxide.
机译:技术领域本发明涉及石墨烯,尤其涉及使用衬底表面改性来掺杂石墨烯的方法,使用石墨烯和无机物制造石墨烯复合电极的方法以及包括该石墨烯结构的石墨烯结构。根据本发明的一个实施方案的掺杂石墨烯的方法可以包括以下步骤:在基板上形成用于掺杂的前体聚合物层;以及在所述衬底上形成用于掺杂的前体聚合物层。将石墨烯定位在其上形成有前体聚合物层的基板上。另外,根据本发明实施方式的用于制造石墨烯复合电极的方法可以包括以下步骤:在催化剂金属上形成石墨烯;以及在催化剂金属上形成石墨烯。在石墨烯上形成透明的导电氧化物;通过施加150℃或更高的热量使透明导电氧化物结晶;将由石墨烯和透明导电氧化物组成的复合电极转移到最终基板上。

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