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METHOD FOR DOPING GRAPHENE, METHOD FOR MANUFACTURING GRAPHENE COMPOSITE ELECTRODE, AND GRAPHENE STRUCTURE COMPRISING SAME
METHOD FOR DOPING GRAPHENE, METHOD FOR MANUFACTURING GRAPHENE COMPOSITE ELECTRODE, AND GRAPHENE STRUCTURE COMPRISING SAME
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机译:掺杂石墨烯的方法,制造石墨烯复合电极的方法以及包含该石墨烯的石墨烯结构
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摘要
The present invention relates to graphene and, particularly, to a method for doping graphene using substrate surface modification, a method for manufacturing a graphene composite electrode using graphene and inorganic matter, and a graphene structure comprising the same. The method for doping graphene according to an embodiment of the present invention may comprise the steps of: forming, on a substrate, a precursor polymer layer for doping; and positioning graphene on the substrate on which the precursor polymer layer is formed. In addition, the method for manufacturing a graphene composite electrode according to an embodiment of the present invention may comprise the steps of: forming graphene on catalyst metal; forming a transparent conductive oxide on the graphene; crystallizing the transparent conductive oxide by applying heat of 150° C. or higher; and transferring, to a final substrate, a composite electrode consisting of the graphene and the transparent conductive oxide.
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