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首页> 外文期刊>Physica status solidi >Improving CdTe-Based Thin-Film Solar Cell Efficiency with the Oxygenated CdSe Layer Prepared by Sputtering Process
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Improving CdTe-Based Thin-Film Solar Cell Efficiency with the Oxygenated CdSe Layer Prepared by Sputtering Process

机译:用溅射工艺制备的含氧CDSE层改善基于CDTE的薄膜太阳能电池效率

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摘要

Sputtered CdSe window layer can improve the short-circuit current density (Jsc) ofCdTe-based thin-film solar cell, however, meanwhile degrade the open-circuitvoltage (V_(oc)) and fill factor (FF). Herein, an oxygenation process is introducedduring CdSe sputtering to improve this window layer’s property for better deviceperformance. The influence of oxygen on the CdSe is similar as the effect ofoxygen on CdS. Incorporation of oxygen into the CdSe film promotes the formationof CdSeO_3 phase. Both Voc and FF of the CdTe solar cells are improveddue to the formation of CdSeO_3, and high efficiency (Eff.) of 18.6% is achieved.Efficiency improvement at module level is also demonstrated after applying theCdSe:O process in production line. This progress contributes to the CdTe-basedthin-film module production for further efficiency improvement and costreduction.
机译:溅射Cdse窗口层可以提高短路电流密度(JSC)然而,基于CDTE的薄膜太阳能电池同时降低了开路电压(V_(OC))和填充因子(FF)。在此,引入了氧合过程在CDSE溅射期间,改善该窗口层的特性以获得更好的设备表现。氧对CDSE的影响与效果相似CD上的氧气。将氧气掺入CDSE薄膜促进形成CDSEO_3阶段。 CDTE太阳能电池的VOC和FF都得到改善由于CDSEO_3的形成,实现了18.6%的高效率(EFF。)。应用后,模块级别的效率提高也在施加后进行说明CDSE:O生产线的过程。此进度有助于基于CDTE的薄膜模块生产,以进一步提高效率提高和成本减少。

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  • 来源
    《Physica status solidi》 |2020年第24期|2000560.1-2000560.6|共6页
  • 作者单位

    State Key Laboratory of Silicon Material and School of Materials Scienceand EngineeringZhejiang University38 Zheda Road Hangzhou 310012 P. R. China;

    Research and Development Department and Production DepartmentAdvanced Solar Power (Hangzhou) Inc.801 Lingyun Street Hangzhou 310018 P. R. China;

    Research and Development Department and Production DepartmentAdvanced Solar Power (Hangzhou) Inc.801 Lingyun Street Hangzhou 310018 P. R. China;

    Research and Development Department and Production DepartmentAdvanced Solar Power (Hangzhou) Inc.801 Lingyun Street Hangzhou 310018 P. R. China;

    Research and Development Department and Production DepartmentAdvanced Solar Power (Hangzhou) Inc.801 Lingyun Street Hangzhou 310018 P. R. China;

    Research and Development Department and Production DepartmentAdvanced Solar Power (Hangzhou) Inc.801 Lingyun Street Hangzhou 310018 P. R. China;

    Research and Development Department and Production DepartmentAdvanced Solar Power (Hangzhou) Inc.801 Lingyun Street Hangzhou 310018 P. R. China;

    Research and Development Department and Production DepartmentAdvanced Solar Power (Hangzhou) Inc.801 Lingyun Street Hangzhou 310018 P. R. China;

    State Key Laboratory of Silicon Material and School of Materials Scienceand EngineeringZhejiang University38 Zheda Road Hangzhou 310012 P. R. China;

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