In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities

摘要

A unique experimental setup at the Accelerator Laboratory of the Universityof Helsinki enables in situ positron annihilation spectroscopy (PAS) analysison ion irradiated samples. In addition, the system enables temperature control(10–300 K) of the sample both during irradiation and during subsequent positronannihilation measurements. Using such a system for defect identification andannealing studies comes with a plethora of possibilities for elaborate studies.However, the system also poses some restrictions and challenges to thesepossibilities, both related to irradiation and to the PAS analysis. This reviewtries to address these issues.