机译:磷植入磷掺杂Si的应变特性及接触电阻与原位磷掺杂Si外延生长的比较
SK Hynix Inc. Icheon 17336 Republic of Korea Department of Material Science and Engineering Yonsei University Seoul 03722 Republic of Korea;
SK Hynix Inc. Icheon 17336 Republic of Korea Department of Material Science and Engineering Yonsei University Seoul 03722 Republic of Korea;
Department of Material Science and Engineering Yonsei University Seoul 03722 Republic of Korea;
Department of Material Science and Engineering Yonsei University Seoul 03722 Republic of Korea;
Department of Material Science and Engineering Yonsei University Seoul 03722 Republic of Korea;
contact resistances; epitaxial growth; phosphorous-doped Si; phosphorous implantation; strain characteristics;
机译:大气压下原位掺磷硅的选择性外延生长特性
机译:掺杂剂浓度对干燥氧化过程中原位磷掺杂外延硅膜的微观结构和菌株状态的影响
机译:通过促进自然氧化物在α-Si中的分散来高质量地外延生长原位掺杂磷的Si膜
机译:通过低压化学气相沉积钝化触点的原位磷掺杂多Si
机译:磷从掺杂磷的硅通过场扩散到金刚石中,通过光激活增强了扩散。
机译:用于垂直晶体管应用的磷掺杂硅/硅锗多层结构的生长和选择性蚀刻
机译:原位和原位的影响清洁对具有低热预算的双极晶体管性能原位磷掺杂多晶硅发射器触点的性能
机译:从313K到673K的重掺磷硅的导热系数,塞贝克系数和电阻率