Theoretical Study on InAlAs/InGaAs Single-Photon Avalanche Detectors with Self-Feedback

摘要

The self-quenching and self-recovery process of the InAlAs/InGaAs single-photonavalanche detector (SPAD) is demonstrated, during which the percentage ofoverbias voltage increases from 1% to 10%. The results show that the overbiasvoltage has a significant impact on the performance of SPAD. It is found thatwhen the percentage of overbias voltage increases from 2% to 10%, both thetrigger time and the quench time decrease, whereas the recovery time decreasesfirst and reaches a minimum when the percentage of overbias voltage is 5%,and then increases. It is also clarified the specific mechanism that the deviceloses its self-feedback capability when the percentage of overbias voltage is lessthan 1%.