机译:通过原位SiN_x预处理m-蓝宝石衬底表面改进的半极性(1122)GaN膜
Engineering Research Center of Advanced Lighting Technology,Fudan University,Shanghai,China;
Engineering Research Center of Advanced Lighting Technology,Fudan University,Shanghai,China;
Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices,Xiamen University,Xiamen,China;
Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices,Xiamen University,Xiamen,China;
Engineering Research Center of Advanced Lighting Technology,Fudan University,Shanghai,China;
Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices,Xiamen University,Xiamen,China;
Engineering Research Center of Advanced Lighting Technology,Fudan University,Shanghai,China;
crystalline quality; luminescence; nucleated islands and coalescence; semipolar GaN; SiNx pretreatment;
机译:半极(1122)GaN薄膜通过原位SIN_X预处理改善了M-Sapphire底物表面
机译:大型独立式半极性{1122} GaN膜的自分离,使用r平面图案化的蓝宝石衬底
机译:通过GaN模板的原位SiN_x预处理改善了InGaN / GaN量子
机译:(11 { - 上述字母2} 2)半极GaN和IngaN / GaN MQWS的结晶和光学性质(1 { - 上面字母1} 00)M-Sapphire
机译:在半极性(202′1′)GaN衬底上的高功率蓝色激光二极管。
机译:Si(100)衬底上的半极性r平面ZnO薄膜:薄膜外延和光学性质
机译:半极性的高调制带宽(1122)IngaN / GaN LED,具有长波长发射