Boron passivation and its reactivation in mesoporous silicon: a 'chemical' model

摘要

A chemical model is proposed to explain the passivation of carriers upon etching and their reactivation by the presence of gases in p~+-type mesoporous silicon (m-PS). The model is based on the results obtained by means of FTIR, EPR, NMR spectroscopies and ab-initio calculations. This chemical description accounts for the behaviour of mPS when contacted with NO_2 or NH_3. B atoms in subsurface location play a prominent role.