Resistive memory effect in self-assembled 3-aminopropyltrimethoxysilane molecular multilayers

摘要

We have observed a pronounced resistive memory effect with an on/off ratio of ～2 in 3-aminopropyltrimethoxysilane (APTMS) molecular multilayers trapped with NH, ions. The APTMS multilayers were deposited on SiO_2/Si(p~(++)) substrates using a self-assembly process and characterized using various techniques, such as water contact angle, ellipos-metery, X-ray photoelectron microscopy, X-ray diffraction and atomic force microscopy. The current-voltage characteristics of Hg/APTMS multilayer/Si(p~(++)) devices, in the negative bias region, exhibited a reproducible hysteresis effect along with a negative differential resistance. A plausible explanation of the observed hysteresis in terms of filling and de-filling of the positive ion traps is proposed.