Extreme temperature 6H-SiC JFET integrated circuit technology

摘要

Extreme temperature semiconductor integrated circuits (ICs) are being developed for use in the hot sections of aircraft engines and other harsh-environment applications well above the 300 ℃ effective limit of silicon-on-insulator IC technology. This paper reviews progress by the NASA Glenn Research Center and Case Western Reserve University (CWRU) in the development of extreme temperature (up to 500 ℃) integrated circuit technology based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs fabricated and packaged by NASA have now demonstrated thousands of hours of continuous 500 ℃ operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Design, modeling, and characterization of transistors and circuits at temperatures from 24 ℃ to 500 ℃ are also described. CWRU designs for improved extreme temperature SiC JFET differential amplifier circuits are demonstrated. Areas for further technology maturation, needed prior to beneficial system insertion, are discussed.rnOptical micrograph of a 500 ℃ durable 6H-SiC JFET differ-ential amplifier IC chip fabricated at NASA prior to packaging. Digitized waveforms measured during the 1st (solid black) and 6519th (dashed grey) hour of 500 ℃ openrtional testing show no change in output characteristics.