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机译:在c面蓝宝石和GaN衬底上生长具有p-InGaN:Mg的绿色发光二极管
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, GA 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, GA 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, GA 30332-0250, USA;
Center for Compound Semiconductors, School of Electrical and Computer Engineering, and School of Materials Science and Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, GA 30332-0250, USA;
Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, GA 30332-0250, USA;
Center for Compound Semiconductors, School of Electrical and Computer Engineering, and School of Materials Science and Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, GA 30332-0250, USA;
Ⅱ-Ⅵ semiconductors; quantum wells; chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.); light-emitting devices;
机译:直接在c平面图案化的蓝宝石衬底上生长的V形半极性InGaN / GaN多量子阱发光二极管
机译:高性能基于GaN的发光二极管的蓝宝石衬底处理:蓝宝石衬底的微图案化及其对基于GaN的发光二极管中光增强的影响
机译:图案化蓝宝石衬底上生长的InGaN / GaN绿光发光二极管的增强的光致发光
机译:使用垂直透明封装在块状GaN和蓝宝石衬底上生长的高光提取效率发光二极管
机译:通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
机译:蓝宝石衬底上具有反应性等离子体沉积AlN成核层的GaN基紫外发光二极管的效率提高
机译:蓝宝石和硅基板上生长的GaN的发光二极管效率下垂和有效活性量