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首页> 外文期刊>Physica status solidi >Comparative studies on transport and magnetotransport behaviour of as-deposited and ex situ annealed A-type antiferromagnetic Nd_(0.45)Sr_(0.55)MnO_3 films
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Comparative studies on transport and magnetotransport behaviour of as-deposited and ex situ annealed A-type antiferromagnetic Nd_(0.45)Sr_(0.55)MnO_3 films

机译:沉积和异位退火A型反铁磁Nd_(0.45)Sr_(0.55)MnO_3薄膜的输运和磁输运行为的比较研究

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摘要

Magnetic, transport and magnetotransport properties of A-type antiferromagnetic Nd_(0.45)Sr_(0.55)MnO_3 films with different thicknesses grown on SrTiO_3 (100) have been investigated before and after ex situ annealing processes. In contrast to the bulk system, all as-deposited films exhibit insulating behaviour due to the local Jahn-Teller distortion induced by in-plane tensile strain. The annealing process only induces an insulator-metal transition in ultrathin film with a thickness of 16nm, resulting in metallically conductive behaviour and the transport properties similar to those of the bulk. This may be ascribed to the cooperative influences of changes in oxygen content and strain-induced D_(x~2-y~2)- type orbital order owing to the annealing process. When a magnetic field of 70 kOe is applied, the metallic behaviour appears in a broad temperature range in the annealed film with 16nm thickness and, the metallic behaviour is also observed in the annealed film with 32 nm thickness. The different effects of the external magnetic field on the transport properties of as-deposited and annealed Nd_(0.45)Sr_(0.55)MnO_3 films are discussed.
机译:在异位退火之前和之后,研究了在SrTiO_3(100)上生长的不同厚度的A型反铁磁Nd_(0.45)Sr_(0.55)MnO_3薄膜的磁,输运和磁输运性质。与本体系统相反,由于平面内拉伸应变引起的局部Jahn-Teller变形,所有沉积的薄膜均表现出绝缘性能。退火过程仅在厚度为16nm的超薄膜中引起绝缘体-金属过渡,从而导致金属导电行为和传输性能与整体相似。这可能归因于退火过程中氧含量的变化和应变诱发的D_(x〜2-y〜2)-型轨道顺序的协同影响。当施加70kOe的磁场时,在16nm厚度的退火膜中在宽温度范围内出现金属行为,并且在32nm厚度的退火膜中也观察到金属行为。讨论了外部磁场对沉积和退火后的Nd_(0.45)Sr_(0.55)MnO_3薄膜传输性能的不同影响。

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  • 来源
    《Physica status solidi》 |2010年第11期|p.2558-2563|共6页
  • 作者单位

    Shenyang National Laboratory for Materials Science, Institute of Metal Research, International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China;

    Shenyang National Laboratory for Materials Science, Institute of Metal Research, International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China;

    Shenyang National Laboratory for Materials Science, Institute of Metal Research, International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China;

    Department of Physics, Research Center for Dielectric and Advanced Matter Physics, Pusan National University, Busan 609 735, Republic of Korea;

    Shenyang National Laboratory for Materials Science, Institute of Metal Research, International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    antiferromagnetics; colossal magnetoresistance; manganites; metal-insulator transitions; pulsed laser deposition; thin films;

    机译:反铁磁巨大的磁阻锰矿;金属-绝缘体过渡;脉冲激光沉积薄膜;

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