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Influence of Sb doping on optical and structural properties of ZnO by MOCVD

机译：钼掺杂对MOCVD法制备ZnO的光学和结构性能的影响

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摘要

Sb-doped zinc oxide (ZnO) films grown by metal organic chemical vapor deposition {MOCVD) were investigated. The influence of Sb-doping concentration on the optical and structural properties of ZnO was investigated. The deep-level emission was suppressed gradually by Sb doping. The grain size of ZnO was also increased by Sb doping. The reasons for improvement in optical and structural properties of ZnO thin films are also discussed.
机译：研究了通过金属有机化学气相沉积（MOCVD）生长的Sb掺杂的氧化锌（ZnO）膜。研究了Sb掺杂浓度对ZnO的光学和结构性质的影响。通过Sb掺杂逐渐抑制了深能级发射。 ZnO的晶粒尺寸也通过Sb掺杂而增加。还讨论了改善ZnO薄膜的光学和结构性能的原因。

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  • 来源
    《Physica status solidi》 |2011年第4期|p.825-828|共4页
  • 作者

    Jianze Zhao; Hongwei Liang; Jingchang Sun; Qiuju Feng; Shuoshi Li; Jiming Bian; Lizhong Hu; Guotong Du; Jingjian Ren; Jianlin Liu;

  • 作者单位

    School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P.R. China,Department of Electrical Engineering, Quantum Structures Laboratory, University of California at Riverside, Riverside, California 92521, USA;

    School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P.R. China;

    School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P.R. China,School of Physics and Electronic Technology, Liaoning Normal University, Dalian, Liaoning 116029, P.R. China,State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, P.R. China;

    School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P.R. China;

    School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P.R. China;

    School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P.R. China;

    School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P.R. China;

    School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P.R. China,State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, P.R. China;

    Department of Electrical Engineering, Quantum Structures Laboratory, University of California at Riverside, Riverside, California 92521, USA;

    Department of Electrical Engineering, Quantum Structures Laboratory, University of California at Riverside, Riverside, California 92521, USA;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    mocvd; photoluminescence; sb doping; zno;

    机译：mocvd;光致发光掺杂zno;

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