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机译:锗纳米晶体的发光和浮栅存储特性
Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur-721302, India;
Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur-721302, India;
Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur-721302, India;
Laboratorio di Nanoscienze, Dipartimento di Fisica, Universita di Trento, Via Sommarive 14, 38100 Povo (Trento), Italy;
Laboratorio di Nanoscienze, Dipartimento di Fisica, Universita di Trento, Via Sommarive 14, 38100 Povo (Trento), Italy;
Laboratorio di Nanoscienze, Dipartimento di Fisica, Universita di Trento, Via Sommarive 14, 38100 Povo (Trento), Italy;
Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur-721302, India;
Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur-721302, India;
charge injection; electroluminescence; germanium; nanocrystals;
机译:使用分子束外延生长浮栅存储器件的二氧化硅嵌入的锗纳米晶体。
机译:非易失性存储器应用的核-壳锗硅纳米浮栅
机译:通过集成用于非易失性存储器的纳米晶体浮栅和用于无电容器1t-dram的部分耗尽型浮体的统一的随机存取存储器(uram)
机译:超窄通道对硅纳米晶体浮栅MOSFET存储器特性的影响
机译:设计用于非易失性闪存设备的纳米晶体浮栅。
机译:用于硅纳米晶浮栅存储器的基于Hf的高k材料
机译:嵌入二氧化硅中的锗纳米晶体用于浮栅存储器件