Prediction of high efficiency ZnMgO/Si solar cells suppressing carrier recombination by conduction band engineering

摘要

A signilicanl conduction band offset appearing in n-ZnO/p-Si hetlerojunction solar cells is recognized as a serious roadblock to obtain high efficiency solar cells. By alloying with Mg, the conduction band in Zn_(1-x)Mg_xO can be raised above that of Si. so that the influence of recombination centers at the interfacc between the two materials is strongly reduced, enabling high efficiency despite recombination velocities as high as 10~6 cm~(-1) By simulating these phenomena we predict an optimal design of a n-Zn_(0.8)Vg_(0.2)O/p-Si solar cell resulting in high conversion el'licienciev