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首页> 外文期刊>Physica status solidi >Electrical characteristics of lead iodide crystal devices on flexible substrate under mechanical tensile strain
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Electrical characteristics of lead iodide crystal devices on flexible substrate under mechanical tensile strain

机译:机械拉伸应变下柔性基板上碘化铅晶体器件的电学特性

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摘要

We report the experimental study on the electrical characteristics of a flexible device based on PbI_2 crystal. It is found that the ohmic contact characteristics remain the same, but the dark current decreased with increasing mechanical tensile strain. The value of the bandgap E_g = 2.28 eV obtained from optical absorption spectra is kept in a steady state during bending, but a widening of the band-tail state occurs.
机译:我们报告了基于PbI_2晶体的柔性器件的电气特性的实验研究。发现欧姆接触特性保持不变,但是暗电流随着机械拉伸应变的增加而减小。从光吸收光谱获得的带隙E_g = 2.28eV的值在弯曲过程中保持稳定状态,但是带尾状态变宽。

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  • 来源
    《Physica status solidi》 |2014年第4期|823-827|共5页
  • 作者单位

    School of Optoelectronic Technology, Chengdu University of Information Technology, No. 24, Block 1, Xuefu Road, 610225 Chengdu, P. R. China;

    School of Optoelectronic Technology, Chengdu University of Information Technology, No. 24, Block 1, Xuefu Road, 610225 Chengdu, P. R. China;

    School of Optoelectronic Technology, Chengdu University of Information Technology, No. 24, Block 1, Xuefu Road, 610225 Chengdu, P. R. China;

    School of Optoelectronic Technology, Chengdu University of Information Technology, No. 24, Block 1, Xuefu Road, 610225 Chengdu, P. R. China;

    School of Optoelectronic Technology, Chengdu University of Information Technology, No. 24, Block 1, Xuefu Road, 610225 Chengdu, P. R. China;

    School of Optoelectronic Technology, Chengdu University of Information Technology, No. 24, Block 1, Xuefu Road, 610225 Chengdu, P. R. China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    dark current; flexible electronics; PbI_2; tensile strain;

    机译:暗电流柔性电子产品;PbI_2;拉伸应变;

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