Performance enhancement of gallium-nitride-based flip-chip light-emitting diode with through-via structure

摘要

For the study of the performance enhancement of a gallium-nitride-based flip-chip light-emitting diode with through-via structure (FC-LED), FC-LED and conventional high-power light-emitting diode (HP-LED) were fabricated simultaneously with the same epitaxial structures and packaging processes. The optoelectronic results showed that the FC-LED's performance of the multiple indices for radiant light and voltage parameters were, respectively, better than that of the conventional HP-LED. One reason for this was that the thermal resistance of the FC-LED chip was about 54% lower, which would induce less heat-flux generation. This was in accordance with the simulation results of the p-n junction temperature. Another reason for this was that the extra parasitic resistance in the conventional HP-LED chip would cause higher voltages and lower multiple indices of radiant power.