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机译:用MOVPE制作的m面GaN肖特基势垒二极管中漏电流和载流子浓度的小面相关性
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan;
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan;
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan;
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan;
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan;
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan;
Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan;
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan;
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan;
Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan,Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan,Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan;
charge carrier concentration; crystal facets; GaN; leakage current; nonpolar surfaces; Schottky diodes;
机译:在多个偏角m平面GaN衬底上用MOVPE层制造的m平面GaN肖特基势垒二极管
机译:通过氧化抑制在AlGaN / GaN异质结构上制造的Ni / Au肖特基势垒二极管的漏电流
机译:垂直型GaN-on-GaN肖特基势垒二极管中的初始泄漏电流路径
机译:低漏电流圆形AlGaN / GaN肖特基势垒二极管
机译:肖特基障碍二极管中的少数载体注入(存储延迟,电导率调制)。
机译:超高压电子束蒸发制备的Pt / GaN肖特基二极管电学特性与温度的关系
机译:Movpe制造的M平面GaN肖特基势态漏电流漏电流和载流子浓度的刻面依赖性(Physte Solidi A 8/2017)