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FMR study of strain-induced magnetic anisotropies in CrO_2 thin films

机译:CrO_2薄膜中应变感应磁各向异性的FMR研究

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Epitaxial CrO_2 thin films were grown on TiO_2 (100) single-crystalline substrates by chemical vapour deposition (CVD) process with use of CrO_3 solid precursor. The films with different thickness (27-530 nm) were studied by Ferromagnetic Resonance (FMR) technique. Strong dependence of FMR signal on the film thickness was observed in the series of CrO_2 films deposited onto the pre-etched TiO_2 substrates. It is shown that the magnetic behaviour of the CrO_2 films arises from competition between magnetocrystalline and strain anisotropies that favour the [001] and [010] magnetization directions, respectively. For the thinnest film the strain anisotropy dominates, and the magnetic easy axis switches from [001] to the [010] direction. On the contrary, the CrO_2 film grown on the unetched substrate demonstrates essentially strain-free magnetic anisotropy behaviour.
机译:利用CrO_3固体前驱体,通过化学气相沉积(CVD)工艺在TiO_2(100)单晶衬底上生长外延CrO_2薄膜。通过铁磁共振(FMR)技术研究了不同厚度(27-530 nm)的薄膜。在沉积到预腐蚀的TiO_2衬底上的一系列CrO_2膜中,观察到FMR信号对膜厚的强烈依赖性。结果表明,CrO_2薄膜的磁行为是由磁晶和应变各向异性之间的竞争引起的,应变各向异性分别有利于[001]和[010]磁化方向。对于最薄的薄膜,应变各向异性占主导地位,易磁化轴从[001]切换到[010]方向。相反,在未蚀刻的衬底上生长的CrO_2膜表现出基本无应变的磁各向异性行为。

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