Cleaved laser facets on free-standing InGaN LD membrane created by laser lift-off and structural characterisation of the membrane

摘要

Cleaved laser facets on free-standing InGaN laser diode membrane created by laser lift-off were fabricated and studied. Cleaved laser facets on GaN on sapphire have been compared with those on free-standing laser membrane. Atomic force microscopy and scanning electron microscopy results show that the cleaved laser facets on free-standing laser membrane are much smoother than those on sapphire. Transmission electron microscopy images show that no significant crystal quality degradation has been introduced during the laser lift-off process.