Enhanced areal efficiency from 370 nm AlGaN micro-ring light emitting diodes

摘要

The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode device based on a mi-croring-array geometry are presented. By structuring the light emission area into an interconnected array of micro-scale rings, the directed light extraction efficiency is enhanced, and current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas.