Thermally stimulated current spectroscopy and photoluminescence of carbon-doped semi-insulating GaN grown by ammonia-based molecular beam epitaxy

摘要

Semi-insulating GaN samples, grown by ammonia-based molecular beam epitaxy and doped with carbon, were investigated by thermally stimulated current spectroscopy and photoluminescence at 4.2 K. In addition to a dominant trap at 0.90 eV, thought to be related to the N interstitial, a trap at 0.50 eV, presumably related to C_(Ga), was observed in the samples with high carbon concentrations. For all of the carbon-doped samples, strong photoluminescence (PL) bands were observed in the yellow (YL), blue (BL), and near-band-edge regions, with the YL dominating, and the BL decreasing as the carbon concentration increased. Besides the PL and trap properties, the carbon doping also influenced the resistivity and effective carrier lifetime.