Growth of GaN on patterned thick HVPE free standing GaN substrates by high pressure solution method

摘要

Results of high pressure solution growth of GaN on various patterned substrates are presented. The growth on MOCVD GaN/sapphires templates patterned in GaN parallel stripes and with Si_xN_y mask is described in details. The usefulness of Mo, Ni and SiO_2 films as masks for lateral overgrown of GaN is also studied. The results of crystallization on thick HVPE free standing GaN patterned in 20 μm high stripes are shown. The role of stripe edges, as seeds for growth of dislocation free GaN crystals is discussed.