MBE growth of cubic Al_xIn_(1-x)N and Al_xGa_yIn_(1-x-y)N lattice matched to GaN

摘要

Ternary and quaternary cubic c-Al_xIn_(1-x)N/GaN and c-Al_xGa_yIn_(1-x-y)N/GaN heterostructures lattice-matched to c-GaN on freestanding 3C-SiC substrates were grown by plasma-assisted molecular beam epitaxy. The c-Al_xGa_yIn_(1-x-y)N alloy permits the independent control of band gap and lattice parameter. The ternary and quaternary films were grown at 620℃. Different alloy compositions were obtained by varying the Al and Ga fluxes. The alloy composition was measured by Energy Dispersive X-ray Spectroscopy (EDX) and Rutherford Backscattering Spectrometry (RBS). X-ray reciprocal space map of asymmetric (-1-13) reflex were used to measure the lattice parameters and to verify the lattice match between the alloy and the c-GaN buffer.