Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs

摘要

We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs (001). Measurements were performed at temperatures of 580℃ and 430℃, in both n and p-type doped films and for both (2 × 4) and c(4×4) re-constructions. Samples employed were grown by MolecularrnBeam Epitaxy with doping levels in the range from 10~(16)-10~(19) cm~(-3). We demonstrate the potential of Reflectance Difference Spectroscopy lor impurity level determinations under growth conditions.