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Electron states in CdMnSe/ZnSe and in CdSe/ZnMnSe diluted magnetic semiconductor quantum dots

机译:CdMnSe / ZnSe和CdSe / ZnMnSe稀释的磁性半导体量子点中的电子态

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摘要

Self-assembed quantum dots (QDs) based on Ⅱ-Ⅵ compounds are interesting with regard to their electronic and optical properties due to their large scale provided by their fundamental gap. Among Ⅱ-Ⅵ materials, diluted magnetic semiconductor (DMS) nanostructures like CdSe/ZnMnSe and CdMnSe/ZnSe QDs are of particular interest due to the exchange interaction between the spin of the carriers and the spin of the paramagnetic Mn~(2+) ions located in ternary alloyrnlayers. The application of an external magnetic field at low temperature induce the so-called giant Zeemann effect of the band edges. In this work we first report the band offset calculations for zinc blende pseudomorphically strained CdSe/ZnSe interface. Then, we calculate the lowest electron states in both (Cd,Mn)Se/ZnSe and in CdSe/(Zn,Mn)Se QDs. Results show that the giant Zeeman splitting is more important when the Mn ions are inside the dot.
机译:基于Ⅱ-Ⅵ类化合物的自组装量子点(QDs)在电子和光学性质方面很有趣,这是由于它们的基本间隙提供了较大的规模。在Ⅱ-Ⅵ类材料中,由于载流子的自旋与顺磁性Mn〜(2+)离子的自旋之间的交换相互作用,尤其引起人们关注的是稀磁半导体(DMS)纳米结构,例如CdSe / ZnMnSe和CdMnSe / ZnSe QDs。位于三元合金层中。在低温下施加外部磁场会引起所谓的带边缘巨兹曼效应。在这项工作中,我们首先报告了锌共混物伪晶应变CdSe / ZnSe界面的带隙计算。然后,我们计算了(Cd,Mn)Se / ZnSe和CdSe /(Zn,Mn)Se量子点中的最低电子态。结果表明,当Mn离子位于点内时,巨大的Zeeman分裂更为重要。

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