Oxygen-Controlled Seed Layer in DC Sputter-Deposited ZnO:Al Substrate for Si Thin-Film Solar Cells

摘要

Oxygen-controlled seed layer in Al-doped ZnO (ZnO:Al) thin films deposited by the industrially compatible dynamic dc magnetron sputter results in both enhanced electron mobilities and appropriate etched morphologies for the Si thin-film solar cells. At the relatively low deposition temperature of 300 °C, optimized ZnO:Al film grown on the seed layer has the carrier mobility of 45 cm/V·s and proper postetching morphology with around 1–2-μm crater size. Reduced angular distribution of the (002) grains analyzed by the diffraction rocking curve is shown as the key structural feature for the improved carrier mobility. Finally, the performance of the microcrystalline Si solar cell on the developed ZnO:Al substrate shows high-efficiency potential of the tandem solar cell adapting this transparent conductive oxide substrate.