机译:提取钝化硅太阳能电池界面缺陷密度的改进方法
Solar Energy Research Institute of Singapore and the Department of Electrical and Computer Engineering, National University of Singapore, Singapore;
Solar Energy Research Institute of Singapore, National University of Singapore, Singapore;
Solar Energy Research Institute of Singapore and the Department of Electrical and Computer Engineering, National University of Singapore, Singapore;
Solar Energy Research Institute of Singapore and the Department of Electrical and Computer Engineering, National University of Singapore, Singapore;
Department of Electrical and Computer Engineering, and Spin and Energy Lab, National University of Singapore, Singapore;
Solar Energy Research Institute of Singapore and the Department of Electrical and Computer Engineering, National University of Singapore, Singapore;
Solar Energy Research Institute of Singapore, National University of Singapore, Singapore;
Silicon; Dielectric measurement; Dielectrics; Semiconductor device measurement; Density measurement; Temperature measurement; Passivation;
机译:有效地探讨界面缺陷的角色和高效P型硅异质结太阳能电池的后表面场的带隙
机译:深入了解界面缺陷密度和背面场带隙对有效p型硅异质结太阳能电池的作用
机译:模拟和研究缓冲本征层,背面电场,界面缺陷密度,p型硅衬底和透明导电氧化物的电阻对本征太阳能电池异质结的影响
机译:数值模拟研究界面缺陷密度和体寿命对硅异质结太阳能电池性能的影响
机译:钝化p-,n-和n + -Si(111)上螺环的界面研究,用于串联钙钛矿/硅太阳能电池器件。
机译:晶体硅太阳能电池隧道氧化物钝化接触中氢气泡的形成和抑制
机译:整合透明导电氧化物以改善硅太阳能电池的红外响应与钝化后触点
机译:富含缺陷外延对晶体硅/非晶硅异质结太阳能电池的影响及低迁移率层用于提高性能。