机译:直接接触电镀序列,无需初始种子层,用于双流拓扑太阳能电池金属化
Fraunhofer Inst Solar Energy Syst D-79110 Freiburg Germany;
Fraunhofer Inst Solar Energy Syst D-79110 Freiburg Germany;
Fraunhofer Inst Solar Energy Syst D-79110 Freiburg Germany;
Fraunhofer Inst Solar Energy Syst D-79110 Freiburg Germany;
Fraunhofer Inst Solar Energy Syst D-79110 Freiburg Germany;
RENA Technol GmbH D-79108 Freiburg Germany;
RENA Technol GmbH D-79108 Freiburg Germany;
RENA Technol GmbH D-79108 Freiburg Germany;
Fraunhofer Inst Solar Energy Syst D-79110 Freiburg Germany;
Fraunhofer Inst Solar Energy Syst D-79110 Freiburg Germany;
Photovoltaic cells; Plating; Metals; Voltage measurement; Electrolytes; Conductivity; Surface emitting lasers; Forward bias plating (FBP); light induced plating (LIP); passivating contacts; silicon solar cells; tunneling oxide and passivating contacts (TOPCon);
机译:等离子体增强的化学气相沉积多Si层厚度对包装的影响及双托管(隧道氧化钝化接触)太阳能电池的量子效率
机译:具有替代种子层的C-Si太阳能电池嵌入载体选择性钝化触点的铜电镀金属化
机译:没有电解质或空穴传输层的染料太阳能电池:一种基于金属导体直接再生染料的概念的可行性研究
机译:建立“用于选择性电镀的母生氧化物阻挡层”金属化双硅杂官能结肠间太阳能电池
机译:碲化镉/硫化镉太阳能电池从正面接触到背面接触:缓冲层和界面层。
机译:基于NiOx的p-i-n钙钛矿太阳能电池有机空穴传输中间层的双面钝化
机译:直接接触电镀序列,无需初始种子层,用于双流拓扑太阳能电池金属化