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机译:电子阻挡结构中的能带定制,提高了基于AlGaN的深紫外发光二极管的效率
State Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;
State Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;
State Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;
State Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;
State Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;
State Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;
State Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;
Engineering Research Center for Semiconductor Integrated Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;
State Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;
Light emitting diodes; Aluminum gallium nitride; Wide band gap semiconductors; Electric potential; Optical losses; Charge carrier processes; Quantum well devices;
机译:近乎效率 - 无杆的基于Algan的深层紫外线发光二极管,没有电子阻挡层
机译:具有均匀电流扩散p电极结构的AlGaN基深紫外发光二极管的墙插效率提高
机译:具有均匀电流扩散p电极结构的AlGaN基深紫外发光二极管的墙插效率提高
机译:通过利用强大的侧壁发射增强了AlGaN基深紫外发光二极管的光提取效率
机译:改进了III族氮化物可见光和紫外发光二极管的性能,包括提取效率,电效率,热管理和高电流密度下的效率维持。
机译:AlGaN基纳米棒紫外发光二极管结构中光提取效率的大幅提高
机译:AlGaN基纳米棒紫外发光二极管结构中光提取效率的大幅提高