Coexisting holes and electrons in high-T _C materials: implications from normal state transport

摘要

Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) dc transport data reported for eight bulk-crystal and six oriented-film specimens of YBa₂Cu₃O_7−δ, and (ii) far-infrared Hall angle data reported for YBa₂Cu₃O_7−δ and Bi₂Sr₂CaCu₂O_8+δ. The electron band exhibits extremely strong scattering; the extrapolated dc residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole-electron analysis of Hall angle data suggests that the electrons possess the greater effective mass.