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Direct Transfer Patterning On Three Dimensionally Deformed Surfaces At Micrometer Resolutions And Its Application To Hemispherical Focal Plane Detector Arrays

机译:在微米分辨率下在三维变形表面上的直接转移图案化及其在半球形焦平面探测器阵列中的应用

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Formation of high performance organic electronic devices on three dimensionally deformed surfaces is severely constrained by the tensile stresses and shear that are introduced during the deformation process. Here, we overcome these limitations to demonstrate the direct transfer of unstrained metals via cold welding onto preformed, 1.0 cm radius plastic hemispheres with micrometer scale feature resolutions to realize 10 kilo-pixel organic photodetector focal plane arrays (FPAs) that mimic the size, function, and architecture of the human eye. The passive matrix FPA consists of (40 μm)~2 organic double heterojunction photodetectors with response extending across the visible spectrum. The detector dark current density is 5.3 ±0.2 μA/cm~2 at -1 V bias, and with a peak external quantum efficiency of 12.6 ± 0.3% at a wavelength of 640 nm. The photodetector impulse response was 20 ± 2 ns, making the FPA suitable for video recording applications. The measured dynamic range allows for 7 bit image resolution, and the FPA is used to create a simple image. This demonstration significantly extends the ability to transfer active electronic devices that has previously only been demonstrated on planar substrates.
机译:高性能有机电子器件在三个尺寸变形的表面上的形成受到变形过程中引入的拉应力和剪切力的严重限制。在这里,我们克服了这些局限性,以演示通过冷焊将未应变的金属直接转移到直径为1.0 cm的预制塑料半球上,并具有微米尺度的特征分辨率,以实现可模仿尺寸,功能的10千像素有机光电探测器焦平面阵列(FPA)。以及人眼的架构。无源矩阵FPA由(40μm)〜2个有机双异质结光电探测器组成,其响应范围横跨可见光谱。在-1 V偏压下,检测器暗电流密度为5.3±0.2μA/ cm〜2,并且在640 nm波长处的峰值外部量子效率为12.6±0.3%。光电探测器的脉冲响应为20±2 ns,这使得FPA适合视频录制应用。测量的动态范围允许7位图像分辨率,并且FPA用于创建简单图像。该演示极大地扩展了以前仅在平面基板上演示过的转移有源电子设备的能力。

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