机译:通过使用ZnS缓冲层改善ZnO纳米棒/ MEH-PPV异质结构的近紫外电致发光
Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;
Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;
Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;
Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;
Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;
ZnO nanorods; electroluminescence; heterostructure; modification buffer layer; ZnS thin film;
机译:ITO和ZnO纳米棒的氧等离子体处理对ZnO纳米棒/ MEH-PPV异质结构器件电致发光的影响
机译:ZnO纳米棒/ MEH-PPV异质结构器件的电致发光
机译:夹有ZnO薄膜的ZnO纳米棒/ p-GaN发光二极管的电致发光性能的改善
机译:通过使用高电阻ZnO透明缓冲层改进CDZNS / CDTE太阳能电池
机译:二维电子气(2DEG)生长的Zn-极性BeMgZnO / ZnO异质结构和BeMgZnO / ZnO异质结构上银肖特基二极管的制备
机译:ZnO纳米棒/ MEH-PPV异质结的紫外光致发光通过优化其厚度并使用AZO作为透明导电电极来实现
机译:n-ZnO纳米棒/ p-si纳米线异质结构发光二极管的制备和电致发光