Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes

摘要

In this contribution we demonstrate for the first time a downscaled n-channel organic field-effect transistors based on N,N'-dialkylsubstituted-(1,7 & 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) with inkjet printed electrodes. First we demonstrate that the use of a high boiling point solvent is critical to achieve extended crystalline domains in spin-coated thin films and thus high electron mobility >0.1 cm~2V~(-1) s~(-1) in top-gate devices. Then inkjet-printing is employed to realize sub-micrometer scale channels by dewetting of silver nanoparticles off a first patterned gold contact. By employing a 50 nm crosslinked fluoropolymer gate dielectric, ～200 nm long channel transistors can achieve good current saturation when operated <5 V with good bias stress stability.