Floating-gate nanofibrous electret arrays for high performance nonvolatile organic transistor memory devices

摘要

Nanofibrous electret arrays based organic field-effect floating-gate transistor memory was firstly developed by electrospinning. The nanofiber arrays are composed of a novel porphyrin molecule of [5,15-bis[4-(pyridyl)ethynyl]-10,20-diphenyl]-21H,23H-porphyrin (DPP) as charge-trapping elements and polystyrene (PS) as the tunneling layer. The floating-gate transistor memory based on electrospinning nanofibrous electret arrays exhibited a reliable controllable threshold voltage shift and effective charge-trapping ability which was obviously superior to the counterparts fabricated with widely employed spin-coating technique. The result shows that electrospinning can be used as an effective artificial strategy to produce predesigned microstructure for the electrets, optimize the electrical memory characteristics, and may be applied in future nonwoven electronic memory devices.