A versatile multifaceted resistive switching memory activated by light and ion irradiation in poly (3-octylthiophene)-zinc oxide hybrids

摘要

The resistive switching memory behavior activated by simulated solar light and swift heavy ion irradiation in poly (3-octylthiophene)-zinc oxide hybrid devices are reported. The current-voltage characteristics show the appearance of a remarkable hysteresis in reverse bias and a considerable in a forward bias upon illumination by simulated solar light results in memory behavior. Ion irradiation exhibits strong enhancement of the memory behavior under both dark and light illuminations. Thus, the memory response is activated and/or enhanced upon illumination by light and irradiation along with the cyclic endurance of the devices. This is attributed due to the formation of well built-in conducting filament pathways through the trapping of injected and photo-generated charges via irradiation-induced electrically active defect and trap states and well explained by a schematic energy band diagram. The defect density induced upon ion irradiation works as a dominant factor and thus the tailoring of the interfacial properties of the hybrid devices leads to the strong strengthening of memory formations. Thus, the hybrid devices can be activated and/or enhanced by light and irradiation for potential fast resistive switching memory applications.